发明名称 |
Method for making a semiconductor device having a metal gate electrode |
摘要 |
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming an impurity containing metal layer on the dielectric layer. A metal gate electrode is then formed from the impurity containing metal layer. Also described is a semiconductor device that comprises a metal gate electrode that is formed on a dielectric layer, which is formed on a substrate. The metal gate electrode includes a sufficient amount of an impurity to shift the workfunction of the metal gate electrode by at least about 0.1 eV.
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申请公布号 |
US6890807(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20030431166 |
申请日期 |
2003.05.06 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAU ROBERT;DOCZY MARK;KUHN MARKUS |
分类号 |
H01L21/28;H01L21/8238;H01L29/51;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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