发明名称 |
Active matrix substrate and manufacturing method therefor |
摘要 |
An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode. |
申请公布号 |
US6891196(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20030617035 |
申请日期 |
2003.07.11 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
TANAKA HIROAKI;YAMAGUCHI HIROTAKA;KANEKO WAKAHIKO;SAKAMOTO MICHIAKI;IHIDA SATOSHI;HAYASE TAKASUKE;YOSHIKAWA TAE;KANOU HIROSHI |
分类号 |
G02F1/1345;G02F1/1333;G02F1/1343;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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