| 摘要 |
A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate in a stacked manner reducing the thickness in the height direction and attaining further miniaturization (thinning). Further, no wire having a large parasitic capacitance or solder is employed for connecting the first memory and the second memory, thereby enabling high-speed data transfer between the first memory and the second memory. |
