发明名称 Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion, and method for fabricating the same
摘要 The present invention provides a semiconductor device which can prevent the oxidization of the surfaces of pad electrodes to enhance the connecting strength between the pad electrodes and external terminals. The semiconductor device according to the present invention comprises pad electrodes for use in connecting external electrodes and a multilayer wiring structure connected to the pad electrodes, wherein one surface of an insulating layer covering the pad electrodes and having openings over the pad electrodes for exposing the surfaces of the pad electrodes is in contact with a metal layer formed from one selected from precious metals and alloys containing the precious metals as main components.
申请公布号 US6890857(B2) 申请公布日期 2005.05.10
申请号 US20020281162 申请日期 2002.10.28
申请人 RENESAS TECHNOLOGY CORP. 发明人 HARADA SHIGERU;TAKATA YOSHIFUMI;IZUMITANI JUNKO
分类号 H01L23/52;H01L21/304;H01L21/3205;H01L21/60;H01L23/485;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L23/52
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