发明名称 |
Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
摘要 |
An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.
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申请公布号 |
US6891237(B1) |
申请公布日期 |
2005.05.10 |
申请号 |
US20000603941 |
申请日期 |
2000.06.27 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BAO ZHENAN;KUCK VALERIE JEANNE;PACZKOWSKI MARK ANTHONY |
分类号 |
H01L21/312;H01L29/76;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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