| 摘要 |
During the fabrication of a mask, to substantially avoid systematic deviations from a desired configuration of recesses that will be formed in the mask, the patterning of the mask substrate is carried out in a sequence of subprocesses. The subprocesses are matched to one another such that the deviations that are formed from these subprocesses compensate for one another, so that in this way, error correction is achieved.
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