| 发明名称 |
Semiconductor light emitting device |
| 摘要 |
An SiN<SUB>x </SUB>film is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiO<SUB>y </SUB>film is formed on the SiN<SUB>x </SUB>film. The SiN<SUB>x </SUB>film and the SiO<SUB>y </SUB>film form a dielectric film.
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| 申请公布号 |
US6891871(B1) |
申请公布日期 |
2005.05.10 |
| 申请号 |
US20000666553 |
申请日期 |
2000.09.21 |
| 申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NOMURA YASUHIKO;HAYASHI NOBUHIKO;HATA MASAYUKI;SHONO MASAYUKI |
| 分类号 |
H01L33/06;H01L33/22;H01L33/32;H01L33/44;H01S5/00;H01S5/02;H01S5/028;H01S5/042;H01S5/22;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01L33/06 |
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