| 发明名称 |
Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
| 摘要 |
A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserved in the silicon nitride film.
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| 申请公布号 |
US6890869(B2) |
申请公布日期 |
2005.05.10 |
| 申请号 |
US20030333683 |
申请日期 |
2003.01.23 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
CHUNG GISHI |
| 分类号 |
C23C16/30;C23C16/34;H01L21/31;H01L21/312;H01L21/314;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/469 |
主分类号 |
C23C16/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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