发明名称 |
СПОСОБ И УСТРОЙСТВО ДЛЯ ОСАЖДЕНИЯ ПО МЕНЬШЕЙ МЕРЕ ЧАСТИЧНО КРИСТАЛЛИЧЕСКОГО КРЕМНИЕВОГО СЛОЯ НА ПОДЛОЖКУ |
摘要 |
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate ( 24 ) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location ( 12 ) where the source fluid is supplied and the substrate ( 24 ). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate ( 24 ) is exposed to both the source fluid and the auxiliary fluid. |
申请公布号 |
RU2003133288(A) |
申请公布日期 |
2005.05.10 |
申请号 |
RU20030133288 |
申请日期 |
2002.04.12 |
申请人 |
ТЕХНИШЕ УНИВЕРСИТЕТ ЭЙНДХОВЕН (NL) |
发明人 |
ХАМЕРС Эдвард Алойс Герард (NL);СМЕТС Арно Хендрикус Мари (NL);ВАН ДЕ САНДЕН Мауритиус Корнелиус Мари (NL);СХРАМ Даниель Корнелис (NL) |
分类号 |
C23C16/24;C23C16/513 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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