发明名称 |
MRAM ARRAY WITH SEGMENTED WORD AND BIT LINES |
摘要 |
A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the work line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line ssegments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices. |
申请公布号 |
WO2005041270(A2) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004US06002 |
申请日期 |
2004.02.27 |
申请人 |
APPLIED SPINTRONICS TECHNOLOGY, INC. |
发明人 |
TSANG, DAVID;MORRIS, ROBERT, PAUL |
分类号 |
G11C7/18;G11C8/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/22 |
主分类号 |
G11C7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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