SYSTEM, METHOD AND APPARATUS FOR IMPROVED GLOBAL DUAL-DAMASCENE PLANARIZATION
摘要
A system and method for planarizing a patterned semiconductor substrate (100) includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate (100) having a conductive interconnect material (120) filling multiple of features in the pattern. The conductive interconnect material has an overburden portion (112). The overburden portion has a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion (120). The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
申请公布号
WO2004084266(A3)
申请公布日期
2005.05.06
申请号
WO2004US07527
申请日期
2004.03.10
申请人
LAM RESEARCH CORPORATION;LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M.
发明人
LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M.