发明名称 SYSTEM, METHOD AND APPARATUS FOR IMPROVED GLOBAL DUAL-DAMASCENE PLANARIZATION
摘要 A system and method for planarizing a patterned semiconductor substrate (100) includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate (100) having a conductive interconnect material (120) filling multiple of features in the pattern. The conductive interconnect material has an overburden portion (112). The overburden portion has a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion (120). The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
申请公布号 WO2004084266(A3) 申请公布日期 2005.05.06
申请号 WO2004US07527 申请日期 2004.03.10
申请人 LAM RESEARCH CORPORATION;LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M. 发明人 LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M.
分类号 B44C1/22;H01L;H01L21/302;H01L21/304;H01L21/311;H01L21/321;H01L21/3213;H01L21/4763;H01L21/768;H01L33/00 主分类号 B44C1/22
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