INFRARED LIGHT EMITTING DEVICE AND GAS SENSOR USING SAME

摘要

Disclosed is an infrared light emitting device (A) comprising a semiconductor substrate (1), a heat insulating layer (2) having a heat conductivity sufficiently lower that that of the semiconductor substrate (1) and formed on one surface of the semiconductor substrate (1) in the thickness direction, a lamellar heating layer (3) having a heat conductivity and electrical conductivity higher than those of the heat insulating layer (2) and formed on the heat insulating layer (2), and a pair of pads (4, 4) formed on the heating layer (3) for electrical conduction. The semiconductor substrate (1) is composed of a silicon substrate. The heat insulating layer (2) and the heating layer (3) are composed of porous silicon layers having different porosities, and the porous silicon layer for the heating layer (3) has a lower porosity than that for the heat insulating layer (2). By using such an infrared light emitting device (A) as the infrared radiation source in a gas sensor, there can be realized an infrared radiation source having a prolonged life.