发明名称 |
HARD SUBSTRATE WAFER SAWING PROCESS |
摘要 |
<p>Die of high aspect ratio formed in a hard wafer substrate are sawed out without requiring tape, obtaining high die yields. Preliminary to sawing the semiconductor die (3) from a sapphire wafer (2), the wafer is joined (20) to a silicon carrier substrate (6) by a thermoplastic layer (4) forming a unitary sandwich-like assembly. Sawing the die from the wafer follows. The thermoplastic is removed, and the die may be removed individually (50) from the silicon carrier substrate. Thermoplastic produces a bond that holds the die in place against the shear force exerted by the saw and by the stream of coolant (30).</p> |
申请公布号 |
WO2005041281(A1) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004US32380 |
申请日期 |
2004.10.01 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
BARSKY, MICHAEL, E.;WOJTOWICZ, MICHAEL;SANDHU, RAJINDER, R. |
分类号 |
H01L21/301;H01L21/46;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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