发明名称 HARD SUBSTRATE WAFER SAWING PROCESS
摘要 <p>Die of high aspect ratio formed in a hard wafer substrate are sawed out without requiring tape, obtaining high die yields. Preliminary to sawing the semiconductor die (3) from a sapphire wafer (2), the wafer is joined (20) to a silicon carrier substrate (6) by a thermoplastic layer (4) forming a unitary sandwich-like assembly. Sawing the die from the wafer follows. The thermoplastic is removed, and the die may be removed individually (50) from the silicon carrier substrate. Thermoplastic produces a bond that holds the die in place against the shear force exerted by the saw and by the stream of coolant (30).</p>
申请公布号 WO2005041281(A1) 申请公布日期 2005.05.06
申请号 WO2004US32380 申请日期 2004.10.01
申请人 NORTHROP GRUMMAN CORPORATION 发明人 BARSKY, MICHAEL, E.;WOJTOWICZ, MICHAEL;SANDHU, RAJINDER, R.
分类号 H01L21/301;H01L21/46;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 主分类号 H01L21/301
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