SEMICONDUCTOR LASER AND MANUFACTURING METHOD

摘要

A semiconductor laser device where the interval between laser beam emission spots is small and its manufacturing method are disclosed. A first light-emitting element (1a) having a semiconductor substrate (12a) and a laser oscillating section (10a) and a second light-emitting element (2a) having a laser oscillating section (4a) are secured to an SOG (3a) of small thickness. A ridge waveguide (8a) of the laser oscillating section (10a) is opposed to a ridge waveguide (5a) of the laser oscillating section (4a). A conductive wiring layer (Qa1) electrically connected to an ohmic electrode layer (9a) on the ridge waveguide (8a) and a conductive wiring layer (Qa2) electrically connected to an ohmic electrode layer (6a) on the ridge waveguide (5a) extend to an insulating layer (11a) on the semiconductor substrate (12a). Ohmic electrodes (Pa1, Pa2) are formed on the bottom of the semiconductor substrate (12a) and the upper surface of the laser oscillating section (4a), respectively. When a drive current is fed between the ohmic electrode (Pa1) and the wiring layer (Qa1), the laser oscillating section (10a) emits a laser beam; similarly when a drive drive current is fed between the ohmic electrode (Pa2) and the wiring layer (Qa2), the laser oscillating section (4a) emits a laser beam. Since the laser oscillating sections (4a, 10a) are secured to the SOG (3a) of small thickness, the semiconductor laser device has a small interval between the light emission spots.