发明名称 |
STRESS REDUCTION OF SIOC LOW K FILM BY ADDITION OF ALKYLENES TO OMCTS BASED PROCESSES |
摘要 |
A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress. |
申请公布号 |
WO2004111296(A3) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004US18701 |
申请日期 |
2004.06.14 |
申请人 |
APPLIED MATERIALS, INC.;SCHMITT, FRANCIMAR, C.;M'SAAD, HICHEM |
发明人 |
SCHMITT, FRANCIMAR, C.;M'SAAD, HICHEM |
分类号 |
C23C16/30;C23C16/455;C23C16/56;H01L21/316 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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