PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR DIAMOND AND n-TYPE SEMICONDUCTOR DIAMOND

摘要

A process for producing an n-type semiconductor diamond characterized in that a single crystal of diamond containing 10 ppm or more of N is implanted with ions so as to contain 10 ppm or above of Li, or a single crystal of diamond is implanted with Li and N ions such that the ion implantation depths where the concentrations of Li and N are 10 ppm or above after ion implantation overlap each other to produce a diamond containing Li and N, and then the diamond is heat treated in a temperature range at least 800° and less than 1800°C thus activating Li and N electrically and restoring the crystal structure of diamond. The n-type semiconductor diamond contains 10 ppm or more of Li and N, respectively, at the same depth from the crystal surface and has a sheet resistance of 10<7>ohm/□ or less.