FIELD-EFFECT MICROELECTRONIC DEVICE, CAPABLE OF FORMING ONE OR SEVERAL TRANSISTOR CHANNELS

摘要

The invention relates to a field-effect microelectronic device and the production method thereof. Said device comprises a substrate (700) and at least one improved structure (702), capable of forming one or several transistor channels. Said structure, composed of several bars stacked on the substrate, may allow space saving in the integration of field-effect transistors and the performances thereof to be improved.