| 摘要 |
1,046,157. Etching. SIEMENS & HALSKE A.G. Feb. 25, 1965 [Feb. 26, 1964], No. 8106/65. Heading B6J. A semi-conductor body or bodies, e.g. silicon or germanium, is or are etched with a gas to form a volatile compound, e.g. silicon monoxide, which evaporates and is removed. In one form, silicon may be treated first with hydrogen to anneal it, and then with a mixture of water vapour and oxygen to form a layer of silicon dioxide. The pressure is then reduced and the silicon dioxide reacts with the silicon underneath it to form silicon monoxide, which then evaporates. The gas may be a mixture of water vapour, oxygen and nitric acid, and may be diluted with hydrogen, nitrogen, a rare gas, a halogen, or a mixture thereof. Alternatively, the process may be carried out in a single step. The apparatus comprises a quartz reaction vessel with inlet and outlet valves, which may contain an electrically heatable table on which the body is placed.
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