| 摘要 |
A magnetic memory cell is provided which comprises a first stack of one or more conductive layers having at least one first magnetic layer with a first magnetic moment, a second stack of one or more conductive layers having least one second magnetic layer with a second magnetic moment, a third stack of one or more nonmagnetic layers, that is arranged between and contacting said first and said second stacks and allows a non-tunnelling current to pass. Furthermore, the magnetic memory cell comprises a current control element allowing a current of up to at least a predetermined writing current amount to pass across the cell in a first direction perpendicular to the layer planes, and prohibiting a current to pass across the cell in a second direction opposite to said first direction, unless the current amount in the second direction is higher than a predetermined reading current amount, which reading current amount is lower than said writing amount. The extensions of said layer stacks in a direction perpendicular to the layer planes, as well as the materials of said layer stacks are adapted to allow a change of an orientation of said first and second magnetic moments relative to each other with the aid of a current of at least said writing current amount, and to influence a current amount across the cell of at most said reading current amount by a giant magnetoresistance effect. |
