| 摘要 |
The present invention provides, in one embodiment, a semiconductor wafer ( 100 ) dicing process. The dicing process comprises removing circuit features ( 120 ) from a street ( 115 ) located between dies ( 105 ) on a semiconductor substrate ( 102 ) using a first blade ( 135 ), such that the semiconductor substrate is exposed, and cutting through the exposed semiconductor substrate using a second blade ( 190 ). The first blade has a surface ( 140 ) coated with an abrasive material ( 145 ) comprising grit particles ( 150 ), having a median diameter ( 155 ) of at least about 25 microns. The grit particles are adhered to the first blade with a bonding agent ( 160 ) having a hardness of about 80 or less (Rockwell B Hardness scale). The grit particles have a concentration in the bonding agent ranging from about 25 to about 50 vol %. Another embodiment of the invention is a method of manufacturing a semiconductor device ( 200 ).
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