发明名称 |
Utilization of an ion gauge in the process chamber of a semiconductor ion implanter |
摘要 |
A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.
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申请公布号 |
US2005092938(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20030697644 |
申请日期 |
2003.10.31 |
申请人 |
INFINEON TECHNOLOGIES RICHMOND, LP |
发明人 |
GARZA FREDERICO;WRIGHT MICHAEL;PETERSON KARL |
分类号 |
H01J37/317;(IPC1-7):H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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