发明名称 |
Beam homogenizer laser irradiation, apparatus, semiconductor device, and method of fabricating the semiconductor device |
摘要 |
An optical system (in <FIGREF IDREF="DRAWINGS">FIGS. 1A and 1B</FIGREF>) wherein a rectilinear laser beam of homogeneous energy distribution is defined for annealing a non-single crystalline semiconductor film (a surface to-be-irradiated 1108 ), is constructed of reflectors ( 1106, 1107 etc.) easily and inexpensively without including lenses of transmission type. The rectilinear laser beam can be defined having a length of at least 600 (mm) which corresponds to the shorter latus of a large-sized substrate for mass production.
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申请公布号 |
US2005092937(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040986073 |
申请日期 |
2004.11.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO |
分类号 |
B23K26/067;B23K26/073;G02B17/06;H01L21/77;H01L21/84;(IPC1-7):A61N5/00 |
主分类号 |
B23K26/067 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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