| 发明名称 |
Capacitor integration at top-metal level with a protection layer for the copper surface |
| 摘要 |
An on-chip decoupling capacitor ( 106 ) and method of fabrication. The decoupling capacitor ( 106 ) is integrated at the top metal interconnect level ( 104 ) and includes surface protection layer ( 109 ) for the copper metal ( 104 b) of the top metal interconnect.
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| 申请公布号 |
US2005095781(A1) |
申请公布日期 |
2005.05.05 |
| 申请号 |
US20030697139 |
申请日期 |
2003.10.30 |
| 申请人 |
PAPA RAO SATYAVOLU S.;ROST TIMOTHY A.;BURKE EDMUND |
发明人 |
PAPA RAO SATYAVOLU S.;ROST TIMOTHY A.;BURKE EDMUND |
| 分类号 |
H01L21/02;H01L21/8242;H01L23/522;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 地址 |
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