| 摘要 |
The present invention relates to a method for manufacturing a flash memory device. A plurality of conductive layers and dielectric layers are etched in- a single etch apparatus, thus forming a control gate and a floating gate. In a gate formation process in which a thickness of a floating gate is over 1500 Å, problems in short process time and short mass production margin in an existing process can be solved while completely stripping a dielectric layer fence.
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