发明名称 |
Ferroelectric memory devices including protection adhesion layers and methods of forming the same |
摘要 |
A ferroelectric memory device includes an interlayer dielectric layer and a a protection adhesion layer formed thereon. A buried contact extends through the protection adhesion layer and the interlayer dielectric layer. A lower electrode is on a portion of the protection adhesion layer that is adjacent to the buried contact and on the buried contact. A ferroelectric layer covers the lower electrode and the protection adhesion layer. An upper electrode overlaps the lower electrode and covers the ferroelectric layer. Related methods are also disclosed.
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申请公布号 |
US2005094452(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040721480 |
申请日期 |
2004.11.26 |
申请人 |
LEE KYU-MANN;PARK KUN-SANG;NAM SANG-DON |
发明人 |
LEE KYU-MANN;PARK KUN-SANG;NAM SANG-DON |
分类号 |
G11C7/00;H01L21/02;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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