发明名称 Light emitting device, driving method of light emitting device and electronic device
摘要 By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
申请公布号 US2005093804(A1) 申请公布日期 2005.05.05
申请号 US20040983749 申请日期 2004.11.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPAN CORPORATION 发明人 YAMAZAKI SHUNPEI;AKIBA MAI;KOYAMA JUN
分类号 G09G3/30;G09G3/20;G09G3/22;G09G3/32;H01L51/50;H05B33/14;(IPC1-7):G09G3/36 主分类号 G09G3/30
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