发明名称 Exposure method
摘要 An exposure method includes forming a resist film on a substrate to be processed, forming a top anti-reflection coating on the resist film, and irradiating the resist film with exposure light through the top anti-reflection coating. Forming the top anti-reflection coating includes adjusting refractive index and thickness of the top anti-reflection coating to increase a ratio of s-polarized light to p-polarized light in the exposure light entering the resist film.
申请公布号 US2005095539(A1) 申请公布日期 2005.05.05
申请号 US20040973424 申请日期 2004.10.27
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 发明人 TSUJITA KOUICHIROU
分类号 G03F7/11;G03F7/00;G03F7/09;G03F7/20;H01L21/027;(IPC1-7):G03F7/00 主分类号 G03F7/11
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