Transistor of semiconductor device and method for manufacturing the same

摘要

Transistor of semiconductor device and method for manufacturing the same are disclosed. The transistor comprises a channel region formed on a sidewall of a silicon fin extruding above a device isolation region. The silicon fin serves as an active region and is shorter in length so as to be spaced apart from an adjacent gate electrode. The width of the channel region is determined by the height of the silicon fin. The source/drain region of the transistor is disposed at an upper surface and the sidewall of the silicon fin to increase the contact region.