Etching method, gate etching method, and method of manufacturing semiconductor devices

摘要

In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carried out. The layer and the resist patter of the dummy sample are etched in an etching device so that the layer and the resist pattern of the dummy device are simultaneously slimmed. Finally, the layer and the resist patter of the actual device are etched in the etching device after the etching of the dummy sample so that the layer and the resist pattern of the actual device are simultaneously slimmed.