| 发明名称 |
Bond pad scheme for Cu process |
| 摘要 |
A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes. |
| 申请公布号 |
US2005095836(A1) |
申请公布日期 |
2005.05.05 |
| 申请号 |
US20040999464 |
申请日期 |
2004.11.29 |
| 申请人 |
LAI CHIA-HUNG;LIN JIUNN-JYI;CHANG TZONG-SHENG;CAO MIN;TSENG HUAN-CHI;LEE YU-HUA;YANG CHIN-TIEN |
发明人 |
LAI CHIA-HUNG;LIN JIUNN-JYI;CHANG TZONG-SHENG;CAO MIN;TSENG HUAN-CHI;LEE YU-HUA;YANG CHIN-TIEN |
| 分类号 |
H01L21/28;H01L21/44;H01L21/60;H01L21/768;H01L23/48;H01L23/485;H01L23/52;H01L29/40;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
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