| 摘要 |
According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN<SUB>1-x-y-z</SUB>As<SUB>x</SUB>P<SUB>y</SUB>Sb<SUB>z </SUB>(0<x+y+z<=0.3), and the barrier layer is formed of a nitride semiconductor containing In.
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