发明名称 |
METHODS OF FORMING FIELD EFFECT TRANSISTORS AND METHODS OF FORMING FIELD EFFECT TRANSISTOR GATES AND GATE LINES |
摘要 |
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
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申请公布号 |
US2005095767(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040001145 |
申请日期 |
2004.11.30 |
申请人 |
TANG SANH D.;VIOLETTE MICHAEL P.;BURKE ROBERT |
发明人 |
TANG SANH D.;VIOLETTE MICHAEL P.;BURKE ROBERT |
分类号 |
G06K19/07;H01L21/336;H01L21/762;H01L21/8234;(IPC1-7):H01L21/00;H01L21/823;H01L21/476 |
主分类号 |
G06K19/07 |
代理机构 |
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