发明名称 |
Heat-processing method and apparatus for semiconductor process |
摘要 |
A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
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申请公布号 |
US2005095826(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040924959 |
申请日期 |
2004.08.25 |
申请人 |
FUJITA TAKEHIKO;TAMURA AKITAKE;SUZUKI KEISUKE;HASEBE KAZUHIDE;OKADA MITSUHIRO |
发明人 |
FUJITA TAKEHIKO;TAMURA AKITAKE;SUZUKI KEISUKE;HASEBE KAZUHIDE;OKADA MITSUHIRO |
分类号 |
H01L21/324;C23C16/44;C23C16/46;H01L21/00;H01L21/205;(IPC1-7):H01L21/24 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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