发明名称 |
Gas for plasma reaction, process for producing the same, and use |
摘要 |
A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
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申请公布号 |
US2005092240(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040493225 |
申请日期 |
2004.11.15 |
申请人 |
SUGAWARA MITSURU;YAMADA TOSHIRO;SUGIMOTO TATSUYA;TANAKA KIMIAKI |
发明人 |
SUGAWARA MITSURU;YAMADA TOSHIRO;SUGIMOTO TATSUYA;TANAKA KIMIAKI |
分类号 |
H01L25/00;C07C17/25;C07C21/22;C23C16/00;H01L21/3065;H01L21/311;(IPC1-7):C23C16/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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