发明名称 |
MOS transistors having recesses with elevated source/drain regions and methods of fabricating such transistors |
摘要 |
Metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions and methods of fabricating the same are provided. The MOS transistors may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques.
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申请公布号 |
US2005095795(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040886167 |
申请日期 |
2004.07.07 |
申请人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE BYEONG-CHAN;LEE DEOK-HYUNG;JUNG IN-SOO |
发明人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE BYEONG-CHAN;LEE DEOK-HYUNG;JUNG IN-SOO |
分类号 |
H01L21/336;H01L21/425;H01L21/8242;H01L29/78;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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