Thermal oxidation method for topographic feature corner rounding

摘要

Within a method for forming a topographic feature within a microelectronic substrate employed within a microelectronic fabrication, there is employed an oxidation mask layer sequentially as: (1) an oxidation mask; and then (2) an etch mask, for forming the topographic feature with a rounded corner within the microelectronic substrate. The method is particularly useful for forming within semiconductor substrates isolation trenches with rounded corners, such as to provide for enhanced performance of microelectronic devices formed within active regions adjacent the isolation trenches and isolation regions formed therein.