发明名称 |
Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability |
摘要 |
A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, such that the conductive layer includes a higher concentration of an electromigration retarding amount of a dopant near the via than away from the via.
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申请公布号 |
US2005095751(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040984604 |
申请日期 |
2004.11.08 |
申请人 |
HAU-RIEGE STEFAN;LIST R. S. |
发明人 |
HAU-RIEGE STEFAN;LIST R. S. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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