发明名称 Precursor material delivery system for atomic layer deposition
摘要 A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
申请公布号 GB2407586(A) 申请公布日期 2005.05.04
申请号 GB20050003353 申请日期 2003.09.10
申请人 * PLANAR SYSTEMS INC 发明人 BRADLEY J * AITCHISON;JARMO * MAULA;HANNU * LESKINEN;TEEMU * LANG;PEKKA * KUOSMMANEN;KARI * HARKONEN;MARTI * SONNINEN;TURKULAINEN TOMMY
分类号 C23C16/44;C30B25/14;(IPC1-7):C23C16/44;C23C16/455 主分类号 C23C16/44
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