发明名称 |
METHOD FOR PRODUCING AT LEAST ONE SMALL OPENING IN A LAYER ON A SUBSTRATE AND COMPONENTS PRODUCED ACCORDING TO SAID METHOD |
摘要 |
The method has at least one opening (10) formed in a layer (7) applied to a semiconductor substrate (1) by providing a V-shaped recess (6) in the in the surface (2) of the substrate before application of an etchable material layer, subjected to anisotropic plasma etching, with removal of material from the base (9) of the V-shaped recess at a higher etching rate than that of the recess walls. Also included are Independent claims for the following: (a) a calibration standard for scanning microscopy; (b) a micromechanical sensor with a flexure beam; (c) a component for electrical/optical transmission of signals |
申请公布号 |
EP1527012(A2) |
申请公布日期 |
2005.05.04 |
申请号 |
EP20030783954 |
申请日期 |
2003.08.04 |
申请人 |
UNIVERSITAET KASSEL |
发明人 |
OESTERSCHULZE, EGBERT;KASSING, RAINER;GEORGIEV, GEORGI |
分类号 |
H01L21/3065;B81B1/00;B81C1/00;G01Q40/02;G01Q60/18;G01Q70/16 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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