| 摘要 |
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4 /SiCl4, SO2SiF4/Cl2, O2/F 2/Cl2, O2/F2, N2O/F2 /Cl2, and NO2/F2/Cl2-based chemistries.
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