| 摘要 |
<p>The processing method has the semiconductor substrate supported within an electrostatic or magnetic chuck (9), such that its front surface faces the chuck, for permanent application of an electrically conductive metal foil, e.g. of Cu or Al, to its rear surface, for acting as an electrical contact, heat sink or mechanical stabilizer. An independent claim for a semiconductor with one or more semiconductor elements having a thickness of less than 200 microns is also included.</p> |
