摘要 |
<p>A process for producing a solar cell is provided which can enhance the photovoltaic conversion efficiency by enlarging the grain sizes in the direction of the thickness of an i-layer to reduce grain boundaries, thereby avoiding recombination of carriers and activating the dopant at the same time. A process for producing a solar cell includes depositing at least a first transparent electrode (12), polycrystalline silicon layers in a PIN structure (13, 14, 15), and a second electrode (16) in sequence on an electrically insulating substrate (11), the polycrystalline silicon layers in a PIN structure including a p-type silicon layer (13), an i-type silicon layer (14), and an n-type silicon layer (15), wherein the polycrystalline silicon layers in a PIN structure are formed by : forming a p-type silicon layer (13), which is then subjected to thermal annealing; depositing an i-type silicon layer (14) on the p-type silicon layer; and depositing an n-type silicon layer (15) on the i-type silicon layer.</p> |