发明名称 |
DUAL DAMASCENE TRENCH DEPTH MONITORING |
摘要 |
One aspect of the present invention relates to a method of dual damascene processing, involving forming a plurality of via openings in the insulation structure containing a single layer of a dielectric material; and simultaneously (i) forming a plurality of trenches in the insulation structure, each trench positioned along the substantially straight line of a group of via openings, and (ii) monitoring the formation of trenches using a scatterometry system to determine trench depth, and terminating forming the trenches when a desired trench depth is attained. |
申请公布号 |
EP1527478(A1) |
申请公布日期 |
2005.05.04 |
申请号 |
EP20030766836 |
申请日期 |
2003.07.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SUBRAMANIAN, RAMKUMAR;LYONS, CHRISTOPHER, F. |
分类号 |
H01L21/3205;H01L21/306;H01L21/66;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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