发明名称 Lithographic apparatus and device manufacturing method
摘要 <p>In a lithography apparatus using 157nm radiation, after a low-flow purge mode has been used, the projection beam is activated at a low intensity and the intensity at substrate level is monitored. When the intensity at substrate level is indicative that the transmission on the beam path is back to normal, it is determined that it is safe to recommence exposures.</p>
申请公布号 EP1528434(A1) 申请公布日期 2005.05.04
申请号 EP20040256586 申请日期 2004.10.26
申请人 ASML NETHERLANDS B.V. 发明人 JASPER, JOHANNES CHRISTIAAN MARIA
分类号 G03F7/20 主分类号 G03F7/20
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