摘要 |
<p>The adjustment marking has a grid structure (10), for provision of a diffraction grating in the photolithographic structuring apparatus, formed by a number of first structural elements (12) applied to the surface of the semiconductor wafer in parallel with one another, at a defined relative spacing, selected elements interrupted for providing a region (14) without any structural elements. At least one partial structure (16), providing a diffraction grating and a reflection pattern in the photolithographic structuring apparatus, has a number of second structural elements (18), at least some of which extend in line with first structural elements of the grid structure.</p> |