发明名称 Adjustment marking for alignment of semiconductor wafer in photolithographic structuring apparatus using grid structure and partial structure each having evenly spaced parallel structural elements
摘要 <p>The adjustment marking has a grid structure (10), for provision of a diffraction grating in the photolithographic structuring apparatus, formed by a number of first structural elements (12) applied to the surface of the semiconductor wafer in parallel with one another, at a defined relative spacing, selected elements interrupted for providing a region (14) without any structural elements. At least one partial structure (16), providing a diffraction grating and a reflection pattern in the photolithographic structuring apparatus, has a number of second structural elements (18), at least some of which extend in line with first structural elements of the grid structure.</p>
申请公布号 DE10345238(A1) 申请公布日期 2005.05.04
申请号 DE2003145238 申请日期 2003.09.29
申请人 INFINEON TECHNOLOGIES AG 发明人 HOMMEN, HEIKO;STAECKER, JENS
分类号 G03F9/00;H01L23/544;(IPC1-7):H01L23/544 主分类号 G03F9/00
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