| 摘要 |
<p>A semiconductor image pickup device's pixel circuits (10) each include a photodetection element (20), and first and second current mirror circuits (30a, 30b) provided as current generation circuit. The photodetection element (20) generates at a node (Na) a photocurrent (10) corresponding to a quantity of light received. The first current mirror circuit (30a) passes first and second currents (I1, I2) corresponding to the photocurrent (I0) to an internal node (Nb) and an output node (No), respectively. The second current mirror circuit (30b) is connected to generate a fourth current (I4) corresponding to a third current (I3) passing through the internal node (Nb) and also allow a differential current between the second and fourth currents (I2 and I4) to flow through the output node (No). Each pixel circuit (10) has its internal node (Nb) electrically connected by a resistance component (40), which implements an inter-pixel connect, to the internal node (Nb) of at least one of adjacent pixel circuits. An output current (Io) will be a current corresponding to a relative difference between the photocurrent (10) of the pixel circuit of interest and the third current (I3) corresponding to an average quantity of light received at adjacent pixels. Thus a high precision, miniaturized semiconductor image pickup device can be provided that can detect bright and dark portions in sufficient contrast even if there is a large brightness distribution within a single field of view.</p> |
