发明名称 |
MOS transistor control circuit for synchronous rectifier |
摘要 |
<p>The circuit has a delay unit to delay closing of a MOS transistor (1) with respect to zero crossing of a sinusoidal voltage (Vd) at cathode (K) and anode (A) terminals of the transistor. A triggering unit triggers the transistor to its on state. A capacitor (5) and a diode (4) are connected in series between the terminals to provide a supply voltage to the circuit. The capacitor is charged when the transistor is in on state.</p> |
申请公布号 |
EP1528661(A1) |
申请公布日期 |
2005.05.04 |
申请号 |
EP20040105379 |
申请日期 |
2004.10.28 |
申请人 |
ST MICROELECTRONICS S.A. |
发明人 |
RIVET, BERTRAND |
分类号 |
H02M1/08;H02M7/21;H02M3/28;H02M3/335;H02M7/217;(IPC1-7):H02M1/08 |
主分类号 |
H02M1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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