发明名称 MOS transistor control circuit for synchronous rectifier
摘要 <p>The circuit has a delay unit to delay closing of a MOS transistor (1) with respect to zero crossing of a sinusoidal voltage (Vd) at cathode (K) and anode (A) terminals of the transistor. A triggering unit triggers the transistor to its on state. A capacitor (5) and a diode (4) are connected in series between the terminals to provide a supply voltage to the circuit. The capacitor is charged when the transistor is in on state.</p>
申请公布号 EP1528661(A1) 申请公布日期 2005.05.04
申请号 EP20040105379 申请日期 2004.10.28
申请人 ST MICROELECTRONICS S.A. 发明人 RIVET, BERTRAND
分类号 H02M1/08;H02M7/21;H02M3/28;H02M3/335;H02M7/217;(IPC1-7):H02M1/08 主分类号 H02M1/08
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