发明名称 |
Alignment or overlay marks for semiconductor processing |
摘要 |
An alignment or overlay mark with improved signal to noise ratio is disclosed. Improved signal-to-noise ratio results in greater depth of focus, thus improving the performance of the alignment mark. The alignment mark comprises a zone plate having n concentric alternating opaque and non-opaque rings. Light diffracted by either the odd or even rings are cancelled while light diffracted by the other of the odd or even rings are added.
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申请公布号 |
US6888260(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20030249530 |
申请日期 |
2003.04.17 |
申请人 |
INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT |
发明人 |
CARPI ENIO;ZAIDI SHOAIB HASAN |
分类号 |
H01L23/544;(IPC1-7):H01L23/544 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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