| 摘要 |
A method of forming resistance changing elements with improved operational characteristics for use in memory devices and the resulting structures are disclosed. A chalcogenide glass having the formula (Ge<SUB>x1</SUB>Se<SUB>1-x1</SUB>)<SUB>1-y1</SUB>Ag<SUB>y1</SUB>, wherein 18<=X<SUB>1</SUB><=28, or the formula (Ge<SUB>x2</SUB>Se<SUB>1-x2</SUB>)<SUB>1-y2</SUB>Ag<SUB>y2</SUB>, wherein 39<=X<SUB>2</SUB><=42, and wherein in both the silver is in a concentration which maintains the germanium selenide glass in the glass forming region is used in a memory cell. The glass may also have a glass transition temperature (Tg) near or higher than typical temperatures used for fabricating and packaging memory devices containing the memory cell.
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