发明名称 Integrated circuit structure
摘要 A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vias selectively positioned over and contacting the plated through holes. The substrate further including a ground plane, two pair of signal planes, and two pair of power planes, wherein the second pair of power planes are located directly underneath the external dielectric layer. A buried plated through hole within the substrate.
申请公布号 US6887779(B2) 申请公布日期 2005.05.03
申请号 US20030719495 申请日期 2003.11.21
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ALCOE DAVID J.;DOWNES, JR. FRANCIS J.;JONES GERALD W.;KRESGE JOHN S.;TYTRAN-PALOMAKI CHERYL L.
分类号 H01L23/498;H05K3/46;(IPC1-7):H01L21/476 主分类号 H01L23/498
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